Sapphire Wafer Application: Growth substrate for III-V and II-VI compounds
Electronics and optoelectronics
IR applications
Silicon On Sapphire Integrated Circuit (SOS) Radio Frequency Integrated Circuit (RFIC)
Regular specification of Sapphire Wafer
Crystal Material: min 99.995%, High Purity, Monocrystalline Al2O3
Diameter: 50.8mm+/-0.1mm; 76.2mm+/-0.25mm; 100.0mm+/-0.2mm; 150.0+/-0.5mm
Thickness: 430+/-25um; 650+/-25um; 650+/-25um; 1300+/-25um
Orientation: C-axis (0001) to M (1-100) 0.2°±0.1°and C-axis (0001) to A (11-20) 0°±0.1°
Single Side Polish: TTV max 3um; max5um; max5um; max 15um
Double Side Polish： TTV max3um; max2.5um; max2.5um; max3um
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